At Kodak, Dr. Hoople was involved in process development for Charge Coupled Device Image Sensors. He was in charge of the Platinum Silicide process for Infra-red Detectors, and was involved in the development of Indium Tin Oxide, a transparent conductor. He was also involved in investigations of materials for light-shields and for novel doping techniques.

At RIT, Dr. Hoople has focused primarily on undergraduate education. He believes in the importance of getting the students a strong foundation to their education, and among his favorite courses to teach are Circuits I, Circuits II and Electronics. He has developed a professional elective course on Power Electronics.

Publications and Patents:

• C.R. Hoople, J.P. Krusius “Characteristics of Submicrometer Gaps in Buried Channel Charge Coupled Device Structures” IEEE Transactions on Electron Devices vol. 38, no. 5, pp 1175-1181, 1991.
• T.P.Chow, and C. Hoople “The Effect of Oxygen Addition on Reactive-Ion-Etched Silicon Damage in CHF3 Plasmas” Journal of the Electrochemical Society, 138, 1399-1402 (1991).
• T.N. Blanton, C.R.Hoople “X-ray Diffraction Analysis of Ultrathin Platinum Silicide Films Deposited on (100) Silicon” Powder Diffraction vol. 17, no. 1, pp 7-9, March 2002

1. G.A. Hawkins, E.T. Nelson, C.R. Hoople U.S. Patent # 5,241,199 “Charge coupled device (CCD) having high transfer efficiency at low temperature operation” 1993
2. W.G. America, C.R. Hoople, L.R. Fendrock, S.L. Kosman U.S. Patent # 6,489,642 “Image sensor having improved spectral response uniformity”, December 3, 2002