III-V EPICenter

The RIT III-V EPICenter is a III-V materials growth facility capable of providing small-batch epitaxial services. Since its beginnings in the 1970s, growth of thin films of epitaxial crystals has proven to be extremely successful in manipulation of the fundamental optical, electrical and magnetic properties of materials. 

The center offers a wide range of services, including:

• Low-cost, rapid prototyping of small scale compound semiconductor materials and devices for researchers, companies, and universities.
• III-V fabrication and characterization through the RIT Semiconductor Nanofabrication Laboratory and the NanoPower Research Laboratories.
• A direct payment model for growth, fabrication, or characterization of compound semiconductor materials and devices.
• Staff support to work with customers for any standard or customized growth or device structure.