RIT IEEE EDS Event: 100 Years of the Field Effect Transistor (FET) “FET100”

In 2025, we will reach an important milestone: 100 years of the Field Effect Transistor (FET). The first concept of the FET was documented in a patent filed by Julius Lilienfeld on October 22, 1925 as a three terminal switching device. Over the past century, the development and innovations of the FET have been fundamental in enabling integrated circuits for computing, memory, communications, and countless other applications. The FET’s versatility and efficiency have made it a cornerstone of modern electronics, driving technological progress and shaping human history in profound ways. The Microelectronic Engineering Program shares 43% of this history. We propose to show an interactive display poster celebrating the 100th birthday of the FET, with demonstrations of RIT fabricated Metal Oxide Field Effect Transistors (MOSFETs) and contributions made by our students through their creative capstone projects and research.

Hand designing and contact printing was used 60 years ago. CAD to EUV.

Moving from micron to nm to Angstrom era