Mohad's paper titled, "Self-Assembled InAsP and InAlAs Nanowires on Graphene via Pseudo-van der Waals Epitaxy" has been published in the Proceedings of the IEEE 18th International Conference on Nanotechnology! This work demonstrates controlled tuning of the morphology and composition of ternary III-V compound semiconductor nanowires on two-dimensional nanosheets through epitaxial self-assembly.