Seth Hubbard
Professor
School of Physics and Astronomy
College of Science
Director of Compound Semiconductor Enterprise Center
Program Faculty, School of Chemistry and Materials Science
Director of NanoPower Research Laboratories
Director of Physics Ph.D. Program
585-475-4214
Office Location
Office Mailing Address
IT Collaboratory, Bldg. 17, Rm. 2115
Seth Hubbard
Professor
School of Physics and Astronomy
College of Science
Director of Compound Semiconductor Enterprise Center
Program Faculty, School of Chemistry and Materials Science
Director of NanoPower Research Laboratories
Director of Physics Ph.D. Program
Education
BS, Drexel University; MS, Case Western Reserve University; Ph.D., University of Michigan
Bio
Dr. Seth Hubbard is currently a Professor of Microsystem Engineering and Physics at the Rochester Institute of Technology as well as serving as Director of the NanoPower Research Laboratory. Dr. Hubbard currently leads a team of undergraduate and graduate students and research staff working on the epitaxial growth, fabrication and characterization of nanostructured solar photovoltaic devices. He has received over $10M in funded external research related to photovoltaic device development, has authored or co-authored over 170 journal and conference publications on electronic and photovoltaic devices and received an NSF CAREER Award as well as the RIT Trustee Scholarship Award. Dr. Hubbard serves as an Editor of the IEEE Journal of Photovoltaics and is actively involved in the organization of the IEEE Photovoltaics Specialists Conference. He has been the advisor to 6 post-doctoral fellows, 7 PhD graduates and over 15 MS students. Prof. Hubbard received his Ph.D. in Electrical Engineering from The University of Michigan under Prof. Dimitris Pavlidis studying the effects of materials properties and epitaxial device design on high power GaN and AlGaN heterojunction field effect transistors grown using vapor phase epitaxy.
Research Interests
My research is focused on quantum photovoltaics devices, materials growth and device design as well as novel sensors using nanostructures. My group's expertise involves vapor phase epitaxy (VPE) of photovoltaic devices and nanostructures, nanostructured device design, photovoltaic characterization as well as testing. Our group was the first to grown VPE based InAs QD solar cells and demonstrate a sub-bandgap absorption process as well a short circuit current enhancement.
585-475-4214
Areas of Expertise
Nanomaterials
Photovoltaics
Solar Energy
Semiconductors
Electronic Materials
Epitaxy
Thin Films
Optoelectronics
Select Scholarship
Journal Paper
Khatiwada, D., et al. "High‐efficiency Single‐junction p‐i‐n GaAs Solar Cell on Roll‐to‐roll Epi‐ready Flexible Metal Foils for Low‐cost Photovoltaics." ,\" Progress in Photovoltaics: Research and Applications 28. 11 (2020): 1107-1109. Web.
D’Rozario, Julia R, et al. "Thin Gallium Arsenide Solar Cells With Maskless Back Surface Reflectors." IEEE Journal of Photovoltaics 10. 6 (2020): 1681-1688. Web.
Nelson, George T, et al. "In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes." IEEE Transactions on Nuclear Science 67. 9 (2020): 2051-2061. Web.
Polly, Stephen J, et al. "Quantum Well Solar Cells Incorporating Thin Barriers for Improved Efficiency." International Society for Optics and Photonics 11275. (2020): 112750. Web.
Poplawsky, J. D., et al. "Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates." ACS Applied Materials & Interfaces 12. (2020): 10664-10672. Web.
Welser, R. E., et al. "Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices." Scientific Reports 9. 1 (2019): 13955. Web.
Pokharel, N., et al. "Orientations of Al4C3 and Al films Grown on GaAs Substrates." Materials Science in Semiconductor Processing 98. (2019): 49-54. Web.
Fedorenko, A., et al. "Design and Simulation of the Bifacial III-V-Nanowire-on-Si Solar Cell." MRS Advances. (2019): 1-8. Web.
McClure, E. L. and S. M. Hubbard. "The Effects of Silicon Substrate Thickness and Annealing temperature on surface coverage for Aluminum-induced Crystallization of Germanium Films." Materials Science in Semiconductor Processing 94. (2019): 22-27. Web.
Baboli, M. A., et al. "Improving Pseudo-van der Waals Epitaxy of Self-assembled InAs Nanowires on Graphene via MOCVD Parameter Space Mapping." CrystEngComm 21. (2019): 602-615. Web.
Dutta, Pavel, et al. "Flexible GaAs Solar Cells on Roll-to-roll Processed Epitaxial Ge Films on Metal Foils: A Rroute Towards Low-cost and High-performance III-V Photovoltaics." Energy & Environmental Science. (2019): 1. Web.
Tatavarti, S.R., et al. "Epitaxial Lift-off (ELO) of InGaP/GaAs/InGaAs Solar Cells with Quantum Dots in GaAs Middle Sub-cell." Solar Energy Materials and Solar Cells 185. (2018): 153-157. Print.
Baboli, M.A., et al. "Improving Pseudo-van der Waals Epitaxy of Self-assembled InAs Nanowires on Graphene via MOCVD Parameter Space Mapping." CrystEngComm. (2018): DOI: 10.1039/c8ce01666f. Print.
Kum, Hyun, et al. "Two-step Photon Absorption in InP/InGaP Quantum Dot Solar Cells." Applied Physics Letters 113. 4 (2018): 43902. Print.
Smith, BL, et al. "Life Cycle Assessment of III-V Precursors for Photovoltaic and Semiconductor Applications." MRS Advances 3. 25 (2018): 1399-1404. Print.
Haque, MD, et al. "Characterization of Nonradiative Recombination Centers in Proton-irradiated InAs/GaAs Quantum Dots by Two-wavelength-excited Photoluminescence." Japanese Journal of Applied Physics 57. 9 (2018): 92302. Print.
Nelson, G.T., et al. "GaSb Solar Cells Grown on GaAs via Interfacial Misfit Arrays for Use in the III-Sb Multi-junction Cell." Applied Physics Letters. (2017): 231104. Print.
Hubbard, Seth, et al. "Effect of Doping on Room Temperature Carrier Escape Mechanisms in InAs/GaAs Quantum Dot p-i-n Junction Photovoltaic Cells." Journal of Applied Physics 119. 19 (2016): 194301--194301. Print.
Hubbard, Seth, et al. "Defect Characterization of Proton Irradiated GaAs pn-junction Diodes with Layers of InAs Quantum Dots." Journal of Applied Physics 119. 18 (2016): 1-10. Print.
Hubbard, S, et al. "Calculation of Strain Compensation Thickness for III-V Semiconductor Quantum Dot Superlattices." Journal of Crystal Growth 454. (2016): 64--70. Print.
Wells, N. P., et al. "Carrier Quenching in InGaP/GaAs Double Heterostructures." Journal of Applied Physics 118. (2015): 65703. Print.
Sellers, D. G., et al. "New Nanostructured Materials for Efficient Photon Upconversion." Photovoltaics, IEEE Journal of 5. (2015): 224-228. Print.
Hyslop, J. S., et al. "Synthesis and Characterization of [Zn(acetate)2(amine)x] Compounds (x=1 or 2) and their use as Precursors to ZnO." Materials Science in Semiconductor Processing 38. (2015): 278-289. Print.
Kerestes, C., et al. "Fabrication and Analysis of Multijunction Solar Cells with a Quantum dot (In)GaAs Junction." Progress in Photovoltaics: Research and Applications 22. (2014): 1172-1179. Print.
Polly, S. J., et al. "Delta-Doping Effects on Quantum-Dot Solar Cell." Photovoltaics, IEEE Journal of 4. (2014): 1079-1085. Print.
Bittner, Z. S., et al. "Investigation of Optical Transitions in InAs/GaAs(Sb)/AlAsSb Quantum dots Using Modulation Spectroscopy." Applied Physics Letters 105. (2014): 253903. Print.
Sellers, D. G., et al. "Analyzing Carrier Escape Mechanisms in InAs/GaAs Quantum dot p-i-n Junction Photovoltaic Cells." Applied Physics Letters 104. (2014): 223903. Print.
Driscoll, K., et al. "Effect of Quantum dot Position and Background Doping on the Performance of Quantum dot Enhanced GaAs Solar Cells." Applied Physics Letters 104. (2014): 23119. Print.
Kerestes, C., et al. "Strain Effects on Radiation Tolerance of Triple-Junction Solar Cells With InAs Quantum Dots in the GaAs Junction." Photovoltaics, IEEE Journal of 4. (2014): 224-232. Print.
Hubbard, S. M., et al. "Effect of Vicinal Substrates on the Growth and Device Performance of Quantum Dot Solar Cells." Solar Energy Materials and Solar Cells 108. (2013): 256-262. Print.
Bennett, M. F., et al. "Epitaxial Lift-off of Quantum Dot Enhanced GaAs Single Junction Solar Cells." Applied Physics Letters 103. (2013): 213-902. Print.
Forbes, D. V., et al. "OMVPE of InAs Quantum Dots on an InGaP Surface." Materials Science in Semiconductor Processing 16. (2013): 1148-1153. Print.
Huang, Y., et al. "InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning." Nano Letters 13. (2013): 5979-5984. Print.
Laghumavarapu, R. B., et al. "GaSb/InGaAs Quantum Dot-Well Hybrid Structure Active Regions in Solar Cells." Solar Energy Materials and Solar Cells 114. (2013): 165-171. Print.
Bailey, Chris, et al. "Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage." IEEE Journal of Photovoltaics 2. 3 (2012): 269-275. Print.
Cress, C. D., et al. "Radiation Effects in Carbon Nanoelectronics." Electronics 1. (2012): 23-31. Print.
Rossi, J. E., et al. "Ion Irradiation of Electronic-Type-Separated Single Wall Carbon Nanotubes: A Model for Radiation Effects in Nanostructured Carbon." Journal of Applied Physics 112. (2012): 034314-11. Print.
Slocum, M. A., D. V. Forbes, and S. M. Hubbard. "Subbandgap Current Collection Through the Implementation of a Doping Superlattice Solar Cell." Applied Physics Letters 101. (2012): 073901-4. Print.
Bailey, Chris, et al. "Near 1 V Open Circuit Voltage InAs/GaAs Quantum Dot Solar Cells." Applied Physics Letters 98. (2011): 163105. Print.
Cress, Cory, et al. "Demonstration of a Nipi-diode Photovoltaic." Progress in Photovoltaics: Research and Applications 19. (2011): 552-559. Print.
Published Conference Proceedings
Bradshaw, Geoffrey K., et al. "Investigation of Radiative Coupling from InGaAsP Quantum Wells for Improving End-of-Life (EOL) Efficiency in Multijunction Solar Cells." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
Hubbard, Seth, et al. "Thin-Barrier Strained Quantum Well Superlattice Solar Cells." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
McClure, E. L., et al. "Gallium Arsenide Solar Cell Growth on Polycrystalline Germanium Substrates by Aluminum-Induced Crystallization." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
Polly, S. J., et al. "Radiation Effects in Thinned GaAs Photovoltaics Incorporating DBRs for Improved Radiation Tolerance of Multijunctions." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
D'Rozario, J. R., et al. "Improved Photoabsorption in Thin Gallium Arsenide Solar Cells using Light Trapping Techniques." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
Polly, S. J., et al. "GaSb Solar Cells Grown by MOCVD via IMF on GaAs." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
Fedorenko, A., et al. "Towards High-Efficiency Triple-Junction Bifacial III-V Nanowire-on-Silicon Solar Cells: Design Approaches Enabling the Concept." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2019 IEEE 46th. Ed. Sarah Kurtz. Chicago, Il: n.p., Web.
Polly, SJ, et al. "Development of a Nano-Enabled Space Power System." Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). Ed. T Grassman. Waikoloa, HI: n.p., 2018. Web.
Nelson, GT, et al. "Modeling of Practical Light Management for Absorption Enhancement in III-V Multi-junction and Quantum-dot Solar Cells." Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). Ed. T Grassman. Waikoloa, HI: n.p., 2018. Web.
Zhu, L, et al. "Experimental Analysis of Open-circuit Voltage Drop in Quantum-dot Solar Cells via Absolute Electroluminescence Measurement." Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). Ed. T Grassman. Waikoloa, HI: n.p., 2018. Web.
Hudson, A, et al. "Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures." Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). Ed. T Grassman. Waikoloa, HI: n.p., 2018. Web.
Polly, SJ, et al. "Incorporation of Photonic Structures for Improved Radiation Tolerance of Lattice Matched Triple Junction Solar Cells." Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). Ed. T Grassman. Waikoloa, HI: n.p., 2018. Web.
McClure, EL, et al. "Growth of GaAs on Polycrystalline Germanium Substrates Prepared via Aluminum-Induced Crystallization." Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. Ed. T Grassman. Waikoloa, HI: n.p., 2018. Web.
Hubbard, SM, et al. "Application of InP Quantum Dots Toward High-temperature Intermediate-band Solar-cell Operation." Proceedings of the Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII. Ed. A Freundlich, L Lombez, and M Sugiyama. SanFransisco, CA: n.p., 2018. Print.
Bailey, C. G., et al. "Investigation of InAlGaAs / InGaAs Quantum Well Solar Cells." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 42nd IEEE. Ed. P. Sheldon. New Orleans, LA: IEEE, 2015. Web.
Dai, Y., et al. "Carrier Collection in Quantum Dots Solar Cells with Barrier Modification." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
Hubbard, S. M., et al. "Intermediate Band Solar Cell Design using InAs quantum dots in AlAsSb Cladding." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
McClure, E. L., et al. "Modeling of Effects of Using Polycrystalline Substrates for Low Cost III-V Photovoltaics." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
Polly, S. J., et al. "Investigation of State-Filling and Carrier Collection of Doped InAs QDs through Direct Absorption Measurement." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, New Orleans, 2015. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
Sato, S.-i., et al. "Defects in GaAs Solar Cells with InAs Quantum Dots Created by Proton Irradiation." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
Schmieder, K. J., et al. "Analysis of GaAs Photovoltaic Device Losses at High MOCVD Growth Rates." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
Smith, B. L., et al. "InAlAs Solar Cells Grown by Alternative MOVPE Precursors." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015. Ed. P. Sheldon. New Orleans, LA: n.p., 2015. Web.
Slocum, M. A., D. V. Forbes, and S. M. Hubbard. "Modeling Nipi Solar Cells Under Concentration Accounting for State Filling Effects." Proceedings of the Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 2015, pp. 93580K-1 to 93580K-6. Ed. A. Freundlich and J. Guillemoles,. San Francisco, CA: n.p., 2015. Web.
Bailey, C. G., et al. "Radiation Effects on InAlGaAs / InGaAs Quantum Well Solar Cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 2871-2874. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Bittner, Z. S., et al. "Experimental Examination of an InAs/GaAs(Sb)/AlAsSb Quantum Dot Approach to the Intermediate Band Solar Cell." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 3488-3491. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Smith, Brittany L., et al. "Characterization of InAlAs Solar Cells Grown by OMVPE." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 3488-3491. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Ericksen, P. S., et al. "Thermal Survivability Characterization of Quantum Dot Multi-Junction Photovoltaic Cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 3488-3491. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Forbes, D. V., et al. "The Effect of Barrier Composition on Quantum Dot Solar Cell Performance." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 3488-3491. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Hellstroem, S. and S. M. Hubbard. "Drift-diffusion Simulations of InAs/AlAsSb Quantum Dot Intermediate-band Solar Cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0491-0494. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Hubbard, S. M., et al. "Impact of Nanostructures and Radiation Environment on Defect Levels in III-V Solar Cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0491-0494. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Lumb, M. P., et al. "Development of InGaAs Solar Cells for >44% Efficient Transfer-Printed Multi-junctions." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0491-0494. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Nelson, G. T., et al. "Study of Deep Levels in InAlAsSb Grown via MOCVD." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 1168-1173. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Polly, S. J., et al. "Effects of Doping on Carrier Confinement in InAs QD Solar Cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 1089-1091. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Schmieder, K. J., et al. "Analysis of GaAs Solar Cells at High MOCVD Growth Rates." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 2130-2133. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Slocum, M. A., et al. "Improving Epitaxial Regrowth Interfaces as a Means of Improving Doping Superlattice Solar Cell Performance." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0102-0106. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Dai, Y., et al. "Electric Field Effect on Carrier Escape from InAs/GaAs Quantum Dots Solar Cells." Proceedings of the Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 3492-3497. Ed. A. Smets. Denver, CO: n.p., 2014. Web.
Slocum, M. A., D. V. Forbes, and S. M. Hubbard. "Enhancement of Radiation Tolerance with the use of a Doping Superlattice Solar Cell." Proceedings of the Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 2014, pp. 89810V-7. Ed. A. Freundlich and J. Guillemoles. San Fransisco, CA: n.p., 2014. Web.
Driscoll, K., et al. "Investigation of the Design Parameters of Quantum Dot Enhanced III-V Solar Cells." Proceedings of the Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. Ed. A. Freundlich and J. F. Guillemoles. San Francisco, CA: SPIE, 2013. Print.
Kerestes, C., et al. "Investigation of Carrier Collection from QD TJSCs." Proceedings of the Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. vol. 8620. Ed. A. Freundlich and J. F. Guillemoles. San Francisco, CA: SPIE, 2013. Print.
Slocum, M. A., et al. "Characterization of Radiation Tolerance in Doping Superlattice Solar Cells." Proceedings of the Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. vol. 8620. Ed. A. Freundlich and J. F. Guillemoles. San Francisco, CA: SPIE, 2013. Print.
Slocum, M. A., D. V. Forbes, and S. M. Hubbard. "Characterization of a Quantum Dot nipi Photovoltaic Device." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. Ed. S. Hubbard. Austin, TX: IEEE, 2012. Web.
Slocum, M. A., D. V. Forbes, and S. M. Hubbard. "Interface Quality Enhancement of the Epitaxial Regrowth Process for Nipi Photovoltaic Devices." Proceedings of the Physics and Simulation of Optoelectronic Devices XX. Ed. Alexandre Freundlich. San Francisco, CA: SPIE, 2012. Print.
Hubbard, S. M., et al. "Optimization of Growth and Device Performance for InAs Quantum Dot Solar Cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. Ed. S. Hubbard. Austin, TX: IEEE, 2012. Web.
Slocum, Michael, et al. "Simulation of Nipi Photovoltaic Devices." Proceedings of the Physics and Simulation of Optoelectronic Devices XIX. Ed. Bernd Witzigmann, et al. San Francisco, CA: SPIE, 2011. Print.
Slocum, Michael. "Simulation of Nipi Photovoltaic Devices." Proceedings of the Physics and Simulation of Optoelectronic Devices. Ed. Alexandre Freundlich, et al. San Francisco: SPIE, 2011. Print.
Bailey, Chris, et al. "Investigation of Spectral Responsivity of InAs QD-embedded GaAs Solar Cells." Proceedings of the Physics and Simulation of Optoelectronic Devices. Ed. Alexandre Freundlich, et al. San Francisco: SPIE, 2011. Print.
Bittner, Zac, et al. "GaP Solar Cells with InGaP Quantum Wells for High Temperature Applications." Proceedings of the 37th IEEE Photovoltaic Specialists Conference (PVSC). Ed. Simon Liu. Seattle: IEEE, 2011. Web.
Kerestes, Chris, et al. "Investigation of Quantum Dot Enhanced Triple Junction Solar Cells." Proceedings of the 37th IEEE Photovoltaic Specialists Conference (PVSC). Ed. Simon Liu. Seattle: IEEE, 2011. Web.
Mackos, Chelsea, et al. "GaAs Substrate Misorientation and the Effect on InAs Quantum Dot Critical Thickness." Proceedings of the 37th IEEE Photovoltaic Specialists Conference (PVSC). Ed. Simon Liu. Seattle: IEEE, 2011. Web.
Polly, Stephen, et al. "Development of a Multi-Source Solar Simulator for Spatial Uniformity and Close Spectral Matching to AM0 and AM1.5." Proceedings of the 37th IEEE Photovoltaic Specialists Conference (PVSC). Ed. Simon Liu. Seattle: IEEE, 2011. Web.
Full Length Book
Hubbard, S. PV from Fundamentals to Applications. 10 ed. Chichester, United Kingdom: Wiley, 2016. Print.
Invited Paper
Strong, W. H., D. V. Forbes, and S. M. Hubbard. "Investigation of Deep Level Defects in Electron Irradiated Indium Arsenide Quantum dots Embedded in a Gallium Arsenide Matrix." Materials Science in Semiconductor Processing. (2014). Print.
Published Article
Forbes,D., S. Hubbard,R. Raffaelle, and J.S. McNatt. “Au-catalyst -free epitaxy of InAs nanowires.” Journal of Crystal Growth, 312 (2010): 1391-1395. Print. É *
Hubbard, S.M. “Quantum Dot Solar Cells.” in Nano-technology for photovoltaics. Ed. L. Tsakalakos. Boca Raton, FL: CRC Press, Taylor & Francis, 2010. n.p. Print. É
Bailey, Christopher G., Stephen J. Polly, Joanne Okvath, David V. Forbes, Cory D. Cress, Seth M. Hubbard, Ryne P. Raffaelle. “Temperature Dependent Photoluminescence Spectroscopyof InAs/GaAs Solar Cells.” Proceedings of the 35th IEEE Photovoltaic Specialists Conference. 20-25 June 2010. n.p. Print. " É
Forbes, David V., Chris G. Bailey, Stephen Polly, Chelsea Plourde, Joanne Okvath, Seth M. Hubbard, Ryne P. Raffaelle, “Substrate Orientation Effects on Quantum Dot Enhanced GaAs Solar Cells.” Proceedingsof 35th IEEE Photovoltaic Specialists Conference, 2010. n.p. Print. " É
Hubbard, Seth M., Chelsea Plourde, Zac Bittner, Christopher G. Bailey, Mike Harris, Tim Bald, Mitch Bennett, David V. Forbes, Ryne Raffaelle, “InAs Quantum Dot Enhancement of GaAsSolar Cells.” Proceedings of 35th IEEE Photovoltaic Specialists Conference, 2010. n.p. Print. " É
Polly,Stephen J., Michael L. Harris, Zac Bittner, Chelsea R. Plourde, Christopher G. Bailey, David V. Forbes and Seth M. Hubbard. “Effectof Cell Size on GaAs Concentrators with InAs Quantum Dots.” Proceedings of the 35th IEEE Photovoltaic Specialists Conference. 20-25 June 2010. 2057-2061. Print. " É
Currently Teaching
MCSE-705
Epitaxial Crystal Growth and Thin Film Science
3 Credits
This graduate course focuses on the epitaxial crystal growth and thin film science widely applicable in the electronics and semiconductor industry. This course provides a combination of fundamental and practical knowledge regarding deposition and characterization of metallic and semiconductor thin film materials. Topics include, but are not limited to, thermodynamics of thin film deposition, crystal structures and defects in thin films, the basic nucleation and growth mechanisms of thin films (growth models, lattice matching epitaxy and domain matching epitaxy), thin film processing techniques (physics vapor deposition, chemical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, pulsed laser deposition), thin film growth instrumentation (energy source, chamber configurations, vacuum systems and growth controllers), and several advanced topics related to defect and dislocation control during the growth of thin films for electrical and optical devices.
MTSE-777
Graduate Project
3 Credits
This course is a capstone project using research facilities available inside or outside of RIT.
MTSE-790
Research & Thesis
1 - 9 Credits
Dissertation research by the candidate for an appropriate topic as arranged between the candidate and the research advisor.
PHYS-601
Graduate Physics Seminar I
1 Credits
This course is the first in a two-semester sequence intended to familiarize students with research activities, practices, and ethics in university, government, industry, and other professional research environments and to introduce students to research tools and skill sets important in various professional environments. As part of the course, students are expected to attend research seminars sponsored by the School of Physics and Astronomy and participate in regular journal club offerings. The course also provides training in scientific writing and presentation skills. Credits earned in this course apply to research requirements.
PHYS-780
Graduate Physics Project
1 - 4 Credits
This course is a graduate capstone project for students enrolled in the Professional Master’s track of the MS Physics Program.
PHYS-790
Graduate Research & Thesis
1 - 4 Credits
Graduate-level research by the candidate on an appropriate topic as arranged between the candidate and the research advisor.
PHYS-791
Continuation of Thesis
0 Credits
Graduate-level research by the candidate on an appropriate topic as arranged between the candidate and the research advisor.
In the News
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September 25, 2024
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RIT selected to receive $9.9 million for U.S. Space Force research
RIT has been selected to lead the United States Space Force University Consortium/Space Strategic Technology Institute 3 (SSTI) research regarding advanced space power and propulsion, which includes $9.9 million in funding.
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August 8, 2024
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NSF awards RIT nearly $3 million to advance semiconductor technologies
The award is part of the NSF’s Research Traineeship Program (NRT), a national initiative to better prepare master’s and doctoral students for the interdisciplinary talents required in semiconductor chip development. The grant will provide 20 doctoral student fellowships to advance research in the much-needed field of semiconductor technologies.
