Santosh Kurinec
Professor
Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering
Extended Faculty
Golisano Institute for Sustainability
585-475-2927
Office Location
Santosh Kurinec
Professor
Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering
Extended Faculty
Golisano Institute for Sustainability
Education
BS, MS, Ph.D., University of Delhi (India)
Bio
Santosh K. Kurinec is a Fellow of IEEE and Professor of Electrical & Microelectronic Engineering at Rochester Institute of Technology (RIT). She served as the Department Head of Microelectronic Engineering from 2001-2009 after which she took an academic year sabbatical at IBM T.J. Watson Research Center, Yorktown Heights, NY as a visiting scholar.
Dr. Kurinec received Ph.D. in Physics from University of Delhi, India with thesis on high permeability Mn-Zn ferrites. During her school years, as a National Science Talent Scholar, she interned at IIT, Delhi, IIT Kanpur, Bhabha Atomic Research Center (BARC) and Tata Institute of Fundamental Research (TIFR). After her doctorate, she worked as Scientist at National Physical Laboratory, New Delhi from 1980-85 where she helped develop a polysilicon photovoltaics program.
She came to the US as an international participant to the Training in Alternative Energy Program at University of Florida. She became a postdoctoral research associate at the Department of Materials Science and Engineering at University of Florida, Gainesville, FL from 1985-1986 where she researched on thin metal film composites and X-ray photoelectron spectroscopy. She then joined the newly created joint college of engineering between Florida State University/Florida A & M University College of Engineering in Tallahassee, FL as Assistant Professor of Electrical Engineering. Her research involved light emission from silicon based light emission devices and high temperature superconducting thin films. She joined RIT as an Associate Professor in 1988.
Dr. Kurinec is a Fellow of IEEE, Member American Physical Society, NY State Academy of Sciences, Associate Editor of IEEE Transactions on Education and an IEEE Electron Device Society Distinguished Lecturer. She received the 2012 IEEE Technical Field Award for Outstanding Undergraduate Teaching.
She received the RIT Trustee Scholarship Award in 2008 and was honored as the Engineer with Distinction by the Rochester Engineering Society in 2013. She has been actively engaged in outreach for promoting engineering education.
Her current research activities include nonvolatile memory, photovoltaics, advanced integrated circuit materials and processes. In nonvolatile memory area, her research has focused on magnetic tunneling and phase change memory devices. In photovoltaics area, she is a member researcher of the NSF funded NCSU and Georgia Tech based center – Silicon Solar Consortium (SiSoC). She brings her experience of integrating a wide range of electronic materials on silicon CMOS/MEMS platform at RIT. She extensively collaborates with industry and academia.
She has over 100 publications in research journals and conference proceedings. For more information about Professor Kurinec and her research, please see her website:
585-475-2927
Areas of Expertise
Energy
Semiconductor memory devices
Semiconductor materials and integration
Photovoltaics
Select Scholarship
Journal Paper
Jacob, Paul, et al. "A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric." Solids 4. 4 (2023): 356-367. Print.
Spaulding, C., et al. "Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping." Materials Letters 325. 132838 (2022): 1-4. Print.
Kurinec, Santosh K., et al. "Degradation Analysis of an Operating PV Module on a Farm Sanctuary." Journal of Renewable and Sustainable Energy 10. 1 (2018): 013505-013513. Print.
Kurinec, Santosh K., et al. "Shallow Si N + P junction diodes realized via molecular monolayer doping." Journal of Microelectronic Engineering Volume 193. (2018): 1-6. Print.
Kurinec, Santosh K., Abhijeet Walke, and GarrettSchlenvogt. "Design strategies for ultra-low power 10 nm FinFETs." Solid-State Electronics Volume 136. (2017): 75-80. Print.
Kurinec, Santosh K. and Abhijeet Walke. "Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD." A Journal for Process and Device Engineers Volume 27. 2 (2017): 1-4. Print.
Kurinec, Santosh K., Michal Kucer, and Bill Schlein. "Monitoring a Photovoltaic System during the Partial Solar Eclipse of August 2017." EPJ Photovoltaics 9. 7 (2018): 10. Web.
Anderson, Jackson D, et al. "Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures." Journal of Electron Device Society 6. (2018): 525-534. Print.
Kurinec, David MacMahon, Andrea Brothers, Karine Florent, Santosh. "1.Layered Structure of MoS2 Investigated using Electron Energy Loss Spectroscopy." Materials Letters 161. (2015): 96-99. Print.
Devasia, Archana, et al. "Investigation of Inter-diffusion in Bilayer GeTe/SnSe Phase Change Memory Films." Thin Solid Films Volume 520. 11 (2012): 3931-3935. Print.
Panferov, Alexander and Santosh Kurinec. "Modeling Quantum Efficiency of Ultraviolet 6H-SiC Photodiodes." IEEE Trans. Electron Devices 58. 11 (2011): 3976-3982. Print.
Devasia, Archana and Santosh Kurinec. "Teaching Solar Cell I-V Characteristics through SPICE Modeling." American Journal of Physics 79. 12 (2011): 1232-1239. Print.
Book Chapter
Kurinec, S., N. Loubet, and D. Sadana. "A road to CMOS node beyond 2nm." Ion Implantation - Science and Technology. Cox Neck Road, Maryland: Ion Implantation Technology Co., 2022. 15-1 - 15-19. Print.
Kurinec, Santosh. "Silicon Solar Photovoltaics: Slow Ascent to Exponential Growth." Women in Mechanical Engineering – Energy and the Environment. Ed. M. Bailey and L. Shackleford. Switzerland, Switzerland: Springer Cham, 2022. 221-243. Print.
Kurinec, Santosh K. "Nanoscale Materials Engineering for Microelectronics." Women in Microelectronics. Ed. Alice Cline Parker and Leda Lunardi. Switzerland, Switzerland: Springer Nature Switzerland AG 2020, 2020. 49-64. Print.
Pringle, Spencer Allen and Santosh K Kurinec. "1.Ferroelectric Tunnel Junctions as Ultra-Low-Power Computing Devices." 1.ENERGY EFFICIENT COMPUTING & ELECTRONICS: Devices to Systems. Ed. Santosh K Kurinec and Sumeet Walia. Bota Racon, FL: CRC Press; Taylor and Francis, 2019. 157-163. Print.
Darvekar, Nishant and Santosh K Kurinec. "GaN-based Schottly barriers for low turn-on voltage rectifiers." 1.ENERGY EFFICIENT COMPUTING & ELECTRONICS: Devices to Systems. Ed. Santosh K Kurinec and Sumeet Walia. Bota Racon, FL: CRC Press; Taylor and Francis, 2019. 239-265. Print.
Full Length Book
Kurinec, Santosh K. Sumeet Walia. Boca Raton, Florida, FL: CRC Press; Taylor and Francis, 2019. Print.
Kurinec, Santosh K. Emerging Photovoltaic Materials:Silicon & Beyond. Hoboken, NJ: Scrivener Publishing WILEY, 2018. Print.
Kurinec, Santosh K and Krzysztof Iniewski. Nanoscale Semiconductor Memories: Technology and Applications. 1 ed. New York City, NY: CRC Press, 2013. Print.
Published Conference Proceedings
Kurinec, Santosh K., et al. "Performance analysis of a “Green” building photovoltaic system." Proceedings of the : Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. Ed. IEEE. Portland, Oregon: IEEE, 2016. Print.
Kurinec, Santosh K., et al. "Nickel silicide metallization for passivated tunneling contacts for silicon solar cells." Proceedings of the Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. Ed. IEEE. Portland, Oregon: IEEE, 2016. Print.
Richer, Santosh Kurinec, Chih Yu Jen, Gaurav Tulsyan, Christiaan. "Terahertz Time-domain Spectroscopy for Characterization of Doping Profiles in Semiconductors." Proceedings of the , Frontiers of Characterization & Metrology for Nanoelectronics. Ed. NIST. Dresden, Germany: NIST, 2015. Web.
Kurinec, S., et al. "Stacked Chalcogenide Layers for Phase Change Memory." Proceedings of the European\Phase Change and Ovonics Symposium 2011, September 4-6, 2011. Ed. Junji Tominaga and Simone Raoux. Zurich, Switzerland: n.p., Print.
Raoux, S, et al. "Influence of Dopants on the Crystallization Temperature, Crystal Structure, Resistance, and Threshold Field for GeTe and Ge2Sb2Te5 Phase Change Materials." Proceedings of the European\Phase Change and Ovonics Symposium, September 2011. Ed. Junji Tominaga and Simone Raoux. Zurich, Switzerland: n.p., Print.
Invited Keynote/Presentation
Kurinec, Santosh K. "Advances in Nonvolatile Memory Technologies." IEEE Oregon CPMT/CAS & MTT/ED Chapter Seminar. IEEE Oregon Chapter. Beaverton, OR. 5 Feb. 2015. Keynote Speech.
Kurinec, Santosh K. "Emerging Nonvolatile Memory Technologies & Applications." Portland State University Seminar. Portland State University. Portland, OR. 6 Feb. 2015. Guest Lecture.
Kurinec, Santosh K. "XRD/TEM/EELS Studies on Memory Device Structures." Frontiers of Characterization & Metrology for Nanoelectronics. The National Institute of Standards and Technology (NIST). Dresden, Germany. 15 Apr. 2015. Conference Presentation.
Kurinec, Santosh K. "Industry/University Cooperative Research: Silicon Solar Consortium." 20th Biennial University/Government/Industry/Micro-Nano Symposium (UGIM),. Harvard University. Cambridge, MA, MA. 16 Jun. 2014. Conference Presentation.
Kurinec, Santosh K. "SiSoC Overview." SiSoC Semi-Annual Review Meeting. Georgia Tech. Atlanta, GA. 15 Sep. 2014. Keynote Speech.
Kurinec, Santosh K. "Silicon Photovoltaics: Material, Manufacturing and Market." Qatar Foundation Annual Research Conference, 2013. Qatar Energy and Environment Research Institute (QEERI) at the Qatar Foundation (QF). Doha, Qatar. 24 Nov. 2013. Guest Lecture.
Kurinec, Santosh K. "Evolution of Phase Change Memory: New Materials, Approaches and Applications." IEEE EDS 2013 Central Texas Mini-Colloquium. Central Texas IEEE EDS Chapter. Austin, TX. 10 May 2013. Guest Lecture.
Kurinec, Santosh K. "Education and Research For Building Semiconductor Technologies." Invited Visit. Samsung Austin Semiconductor. Austin, TX. 9 May 2013. Address.
Kurinec, Santosh K. "Photovoltaic Energy from Materials Perspective." IEEE Mini colloquium on Energy Harvesting. University of Maryland. College Park, MD. 25 Sep. 2012. Keynote Speech.
Kurinec, Santosh K. "Silicon Based PV in Light of Manufacturing Innovations of the IC industry." SunShot Seminar Series. US Department of Energy. Washington DC, Washington DC. 12 Oct. 2012. Guest Lecture.
Kurinec, Santosh K. "Paving the Way to a Smarter World: Creativity in Engineering Education." Technology and Society Forum. New Jersey Institute of Technology. Newark, NJ. 28 Mar. 2012. Keynote Speech.
Kurinec, Santosh K. "Nanoscale Materials Engineering for Non Volatile Memory." Invited Visit. ITM University. Gurgaon, Haryana, India, India. 23 Apr. 2012. Guest Lecture.
Kurinec, Santosh K. "Silicon Watts: Myths and Promise of Photovoltaics." Laboratory for Laser Energetics (LLE) Science and Technology (S&T) Seminar Series. University of Rochester. Laboratory for Laser Energetics, University of Rochester, Rochester, NY. 25 Feb. 2011. Guest Lecture.
Kurinec, Santosh K. "Three Decades of Microelectronic Engineering Education at Rochester Institute of Technology." The NEATEC Annual Conference. NEATEC: Northeast Advanced Technological Education Center. Hudson Valley Community College, Troy, NY. 29 Nov. 2011. Guest Lecture.
Kurinec, Santosh K. "Microelectronics: Silicon Valley to Silicon Watts." IEEE EDS Joint Chapter Meeting. IEEE EDS Rochester Chapter. RIT Inn & Conference Center, Rochester, NY. 29 Mar. 2011. Keynote Speech.
Kurinec, Santosh K. "Electrical & Electronic Engineers: Paving the Way to a Smarter Planet." IEEE Student Design Contest 2011. IEEE SDC. RIT, Rochester, NY. 7 May 2011. Keynote Speech.
Kurinec, Santosh K. "Nanoscale Materials Engineering for Phase Change Memory." CMOS Emerging Technologies 2011. University of British Columbia. Whistler, British Columbia, Whistler, British Columbia, Canada. 15 Jun. 2011. Conference Presentation.
Editor (book or journal)
Kurinec,Santosh. Microelectronics and Electronics, IEEE Transactions on Education.Piscataway, NJ: IEEE Education Society, 2010. Print.
Published Article
Devasia Archana, Santosh Kurinec, Kristy Campbell, Simone Raoux. “Influence of Sn Migration on PhaseTransition in GeTe and Ge2Se3 Thin Films.”Applied Physics Letters, 96.14 (2010):141908-1-3. Print. " É *
Kurinec, Santosh,Michael Jackson, Davide Marriotti, Surendra Gupta, Sean Rommel, Dale Ewbank, Karl Hirschman, Robert Pearsonand Lynn Fuller. “Microelectronic EngineeringEducation for Emerging Technologies.” IEEE Frontiers in Education (FIE) Conference,(27-30 October 2010). T3J-1-6. Web. É *
Kurinec, Santosh, Sean Rommel, Dale Ewbank, and Karl Hirschman.“Summer Innovation Experience for Undergraduates in Semiconductor Technology.” Frontiers in Education, (October 2010): T1J-1-2. Web. *
Jackson, Michael, Elaine Lewis, Stephanie Townsend, Sara Silverstone, and Santosh Kurinec.“Excelsior Scholars Summer Program:Introducing K-12 Students to Microelectronic and Nanofabrication Through Photovoltaics.”ASEE/IEEE Frontiers in Education Conference,27-30 October 2010. S2E-1-6. Web. É *
Jackson, Michael, Elaine Lewis, Daniel Fullerton, Santosh Kurinec, and Rommel Sean. “Work in Progress- Integrating Semiconductory and Nanotechnology Fundamentals into a HighSchool Science Curriculim Module.” ASEE/IEEE Frontiers in Education Conference, 27-30 October 2010. T2E-1-2. Print. É *
Formal Presentation
Kurinec, Santosh. “Nanoscale Materials Engineering for PhaseChange and Magnetoresistive Nonvolatile Memory.” IEEE Electron Device Society Central Texas Chapter. Austin, TX. 17September 2010. Presentation.
Fellowship
IEEE Fellow
Currently Teaching
EEEE-711
Advanced Carrier Injection Devices
3 Credits
A graduate course in the fundamental principles and operating characteristics of carrier-injection-based semiconductor devices. Advanced treatments of pn junction diodes, metal-semiconductor contacts, and bipolar junction transistors form the basis for subsequent examination of more complex carrier-injection devices, including tunnel devices, transferred-electron devices, thyristors and power devices, light-emitting diodes (LEDs), and photodetectors. Topics include heterojunction physics and heterojunction bipolar transistors (HBT).
EEEE-712
Advanced Field Effect Devices
3 Credits
An advanced-level course on MOSFETs and submicron MOS devices. Topics include MOS capacitors, gated diodes, long-channel MOSFETs, subthreshold conduction and off-state leakage, short-channel effects, hot-carrier effects, MOS scaling and advanced MOS technologies.
EEEE-713
Solid State Physics
3 Credits
An advanced-level course on solid-state physics, with particular emphasis on the electronic properties of semiconductor materials. Topics include crystal structure, wave propagation in crystalline solids, lattice vibrations, elements of quantum mechanics, elements of statistical mechanics, free-electron theory of metals, Boltzmann transport equation, quantum-mechanical theory of carriers in crystals, energy band theory, equilibrium carrier statistics, excess carriers in semiconductors, carrier transport.
MCEE-520
Photovoltaic Science and Engineering
3 Credits
This course focuses on the principle and engineering fundamentals of photovoltaic (PV) energy conversion. The course covers modern silicon PV devices, including the basic physics, ideal and non-ideal models, device parameters and design, and device fabrication. The course discusses crystalline, multi-crystalline, amorphous thin films solar cells and their manufacturing. Students will become familiar with basic semiconductor processes and how they are employed in solar cells manufacturing. The course further introduces third generation advanced photovoltaic concepts including compound semiconductors, spectral conversion, and organic and polymeric devices. PV applications, environmental, sustainability and economic issues will also be discussed. Evaluations include assignments and exams, a research/term paper on a current PV topic.
MCEE-601
Microelectronic Fabrication
3 Credits
This course introduces the beginning graduate student to the fabrication of solid-state devices and integrated circuits. The course presents an introduction to basic electronic components and devices, lay outs, unit processes common to all IC technologies such as substrate preparation, oxidation, diffusion and ion implantation. The course will focus on basic silicon processing. The students will be introduced to process modeling using a simulation tool such as SUPREM. The lab consists of conducting a basic metal gate PMOS process in the RIT clean room facility to fabricate and test a PMOS integrated circuit test ship. Laboratory work also provides an introduction to basic IC fabrication processes and safety.
MCEE-620
Photovoltaic Science and Engineering
3 Credits
This course focuses on the principle and engineering fundamentals of photovoltaic (PV) energy conversion. The course covers modern silicon PV devices, including the basic physics, ideal and non-ideal models, device parameters and design, and device fabrication. The course discusses crystalline, multi-crystalline, amorphous thin films solar cells and their manufacturing. Students will become familiar with basic semiconductor processes and how they are employed in solar cells manufacturing. The course further introduces third generation advanced photovoltaic concepts including compound semiconductors, spectral conversion, and organic and polymeric devices. PV applications, environmental, sustainability and economic issues will also be discussed. Evaluations include assignments and exams, a research/term paper on a current PV topic.
MCEE-713
Quantum and Solid-State Physics for Nanostructures
3 Credits
This course describes the key elements of quantum mechanics and solid state physics that are necessary in understanding the modern semiconductor devices. Quantum mechanical topics include solution of Schrodinger equation solution for potential wells and barriers, subsequently applied to tunneling and carrier confinement. Solid state topics include electronic structure of atoms, crystal structures, direct and reciprocal lattices. Detailed discussion is devoted to energy band theory, effective mass theory, energy-momentum relations in direct and indirect band gap semiconductors, intrinsic and extrinsic semiconductors, statistical physics applied to carriers in semiconductors, scattering and generation and recombination processes.
MTSE-777
Graduate Project
3 Credits
This course is a capstone project using research facilities available inside or outside of RIT.
MTSE-790
Research & Thesis
1 - 9 Credits
Dissertation research by the candidate for an appropriate topic as arranged between the candidate and the research advisor.