About
About
Contact
Jing Zhang, CMOS+X NRT Director
jzeme@rit.edu
Seth Hubbard, CMOS+X NRT Associate Director
smhsps@rit.edu
Elizabeth Dugdale, CMOS+X NRT Project Coordinator
ednprl@rit.edu
The CMOS+X National Science Foundation Research Traineeship (NRT) award at Rochester Institute of Technology (RIT) aims to develop an innovative convergent graduate research training model for next- generation complementary metal-oxide-semiconductor (CMOS) + X (X = AI, biomedical, chemical, optoelectronic, photonic, nanoelectronic, quantum, and packaging) talents, in order to address a significant domestic semiconductor talent shortage which is an urgent national priority. This NRT program seeks to engage at least 170 graduate students including 20 funded Ph.D.s to help close the semiconductor talent gap.
RIT’s CMOS+X Semiconductor Technologies NRT aims to: a) advance interdisciplinary and inclusive semiconductor research. Four research tracks led by NRT faculty team spans from fundamental physics and material science to micro- and nanoelectronics, optoelectronics and photonics, and eventually to integrated circuits and packaging. b) Equip diversified NRT cohorts with enhanced technical, professional, social and diversity, equity, and inclusion skills. c) Establish and sustain this convergent graduate training model to serve as a pipeline for much needed domestic interdisciplinary semiconductor workforce for industry, government, and academia.
A CMOS+X Ph.D. traineeship includes personalized curriculum, workshops/seminars/events/journal clubs, internships at major semiconductor companies and government laboratories, teaching experiences, NRT seed grant support, conference travel support. Fellowships are also available that include annual $34K stipend with full tuition support for up to four years. Please see more details under “Benefits and Application”. All CMOS+X trainees will receive a certificate upon successfully finishing up the training components.
This material is based upon work supported by the National Science Foundation under Award No. DGE- 2345983. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.