Ivan Puchades Headshot

Ivan Puchades

Associate Professor

Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering

585-475-7294
Office Location

Ivan Puchades

Associate Professor

Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering

Education

BS, MS, Ph.D., Rochester Institute of Technology

Bio

Dr. Puchades completed his Ph.D. on thermally actuated MEMS resonators to measure the viscosity of fluids in 2011. In 2016 he completed a 2-year postdoctoral appointment providing innovating insight on the physical characteristics of doped electronic-type-separated single wall carbon nanotubes and developing novel devices. He currently teaches undergraduate courses in Electrical Engineering and has taught graduate-level Microelectronic Engineering courses in MEMS Design, Fabrication and Test.

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585-475-7294

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Selected Recent Publications

Huang, Tzu-Jung; Ankolekar, Adheesh; Pacheco-Sanchez, Anibal; Puchades, Ivan;     Investigating the device performance variation of a buried locally gated Al/Al2O3 graphene field-effect transistor process    Applied Sciences    13    12    7201    2023    MDPI

 

Biancone, Chris J; Huang, Tzu-Jung; Shukla, Maharshi Y; Kandlikar, Satish G; Puchades, Ivan;     A hypersensitive pressure sensor array for phase change microfluidics analysis    Sensors and Actuators A: Physical    372        115344    2024    Elsevier

 

Gan, Luis; Choudhary, Shreyas; Reddy, Kavana; Levine, Connor; Jander, Lukas; Uchil, Amogh; Puchades, Ivan;     Waterproofing a Thermally Actuated Vibrational MEMS Viscosity Sensor    Actuators    13    2    57    2024    MDPI

Boyd, Samuel J; Rossi, Jamie E; Weinstein, Steven J; Landi, Brian J; Puchades, Ivan;     Chemically doped, purified bulk multi-walled carbon nanotube conductors with enhanced AC conductivity to 40 GHz    Carbon    226        119209    2024    Pergamon

 

Huang, Tzu-Jung; Kiebala, Tobias; Suflita, Paul; Moore, Chad; Housser, Graeme; McMahon, Shane; Puchades, Ivan;     Comparative Analysis of Thermal Properties in Molybdenum Substrate to Silicon and Glass for a System-on-Foil Integration    Electronics    13    10    1818    2024    MDPI


Ribero-Figueroa, Xiomara; Pacheco-Sanchez, Anibal; Huang, Tzu-Jung; Jiménez, David; Puchades, Ivan; Torres-Torres, Reydezel;     A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET    IEEE Transactions on Electron Devices                2024    IEEE

Experimental design for CO2 laser cutting of sub-millimeter features in very large-area carbon nanotube sheets, AR Bucossi, JE Rossi, BJ Landi, I Puchades 
Optics & Laser Technology 134, 106591  2021

 

Platinum nanometal interconnection of copper–carbon nanotube hybrid electrical conductors, AP Leggiero, SD Driess, ED Loughran, DJ McIntyre, RK Hailstone, ... 
Carbon 168, 290-301 1 2020 

Antenna Arrays as Millimeter-Wave Wireless Interconnects in Multichip Systems 
RS Nar

Currently Teaching

EEEE-281
3 Credits
Covers basics of DC circuit analysis starting with the definition of voltage, current, resistance, power and energy. Linearity and superposition, together with Kirchhoff's laws, are applied to analysis of circuits having series, parallel and other combinations of circuit elements. Thevenin, Norton and maximum power transfer theorems are proved and applied. Circuits with ideal op-amps are introduced. Inductance and capacitance are introduced and the transient response of RL, RC and RLC circuits to step inputs is established. Practical aspects of the properties of passive devices and batteries are discussed, as are the characteristics of battery-powered circuitry. The laboratory component incorporates use of both computer and manually controlled instrumentation including power supplies, signal generators and oscilloscopes to reinforce concepts discussed in class as well as circuit design and simulation software.
EEEE-480
4 Credits
This is an introductory course in analog electronic circuit analysis and design. The course covers the following topics: (1) Diode circuit DC and small-signal behavior, including rectifying as well as Zener-diode-based voltage regulation; (2) MOSFET current-voltage characteristics; (3) DC biasing of MOSFET circuits, including integrated-circuit current sources; (4) Small-signal analysis of single-transistor MOSFET amplifiers and differential amplifiers; (5) Multi-stage MOSFET amplifiers, such as cascade amplifiers, and operational amplifiers; (6) Frequency response of MOSFET-based single- and multi-stage amplifiers; (7) DC and small-signal analysis and design of bipolar junction transistor (BJT) devices and circuits; (8) Feedback and stability in MOSFET and BJT amplifiers.
EEEE-499
0 Credits
One semester of paid work experience in electrical engineering.
ENGR-899
3 Credits
This course is used by students who plan to study a topic on an independent study basis. The student and instructor must prepare a plan of study and method of evaluation for approval by the program director prior to course registration.
MCEE-770
3 Credits
This course will provide an opportunity for the student to become familiar with the design, fabrication technology and applications of Microelectromechanical systems. This is one of the fastest growing areas in the semiconductor business. Today's MEMS devices include accelerometers, pressure sensors, flow sensors, chemical sensors, energy harvesting and more. These devices have wide variety of applications including automotive, consumer, military, scientific, and biomedical. Students will select a MEMS device/project to be made and then design, fabricate, test, prepare a project presentation and final paper.