Salameh Ahmad
Assistant Professor
Bio
Dr. Salameh Ahmad is an Assistant Professor of Physics in the Mathematics and Sciences Department at Rochester Institute of Technology (RIT) Dubai. He joined RIT Dubai in 2010. Before that, he earned his Bachelor's and Master's degrees in Physics from Yarmouk University in Irbid, Jordan, and completed his Ph.D. in Condensed Matter Physics at Michigan State University in East Lansing, Michigan. Dr. Ahmad has also served as a Lecturer at Michigan State University and as an Assistant Professor at Michigan State University’s Dubai Campus before transitioning to his current role at RIT Dubai.
Dr. Ahmad’s primary research interest lies in the theoretical understanding of the electronic structure and transport properties of novel ternary and quaternary narrow band-gap semiconductors, such as PbTe, SnTe, GeTe, and related systems, incorporating various impurity atoms for potential thermoelectric applications. His research involves employing local density approximation (LDA) and generalized gradient approximation (GGA) methods within density functional theory (DFT) calculations.
In addition to his work in condensed matter physics, Dr. Ahmad is passionate about research in physics education. He explores the effectiveness of active learning methodologies in enhancing students' understanding compared to traditional teaching methods. His research also investigates students' performance in conceptual versus problem-solving questions and examines how emerging technologies impact students’ comprehension and academic performance.
Select Scholarship
1. Salameh Ahmad, S.D. Mahanti, Energy and Temperature dependence of relaxation time and Wiedemann-Franz law on PbTe, Phys. Rev. B 81, 165203 (2010).
2. S.D. Mahanti, Khang Hoang, Salameh Ahmad, Deep Defect States in Narrow Band-Gap Semiconductors, Physica B 401-402C, 291 (2007).
3. Salameh Ahmad, S.D. Mahanti, Khang Hoang, M. G. Kanatzidis, Ab initio Studies of Electronic Structure of Defects in PbTe, Phys. Rev. B 74, 155205 (2006).
4. Salameh Ahmad, Khang Hoang, S. D. Mahanti, Ab initio Study of Deep Defect States in Narrow Band-Gap Semiconductors: Group III Impurities in PbTe, Phys. Rev. Lett. 96, 056403 (2006); 96, 056403(E) (2006).
5. Abdel-Fatah D. Lehlooh, Salameh M. Ahmad, Sami H. Mahmood, Mössbauer Spectroscopy Study of Fe-Si Solid Solution Prepared by Mechanical Milling, Hyperfine Interactions 139/140: 335–344, 2002.